发明名称 |
LASER IRRADIATION METHOD, LASER IRRADIATION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
In conducting laser annealing using a CW laser or a quasi-CW laser, productivity is not high as compared with an excimer laser and thus, it is necessary to further enhance productivity. According to the present invention, a fundamental wave is used without putting laser light into a non linear optical element, and laser annealing is conducted by irradiating a semiconductor thin film with pulsed laser light having a high repetition rate. A laser oscillator having a high output power can be used for laser annealing, since a non linear optical element is not used and thus light is not converted to a harmonic. Therefore, the width of a region having large grain crystals that is formed by scanning once can be increased, and thus the productivity can be enhanced dramatically. |
申请公布号 |
WO2006043690(A1) |
申请公布日期 |
2006.04.27 |
申请号 |
WO2005JP19456 |
申请日期 |
2005.10.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;TANAKA, KOICHIRO;YAMAMOTO, YOSHIAKI |
发明人 |
TANAKA, KOICHIRO;YAMAMOTO, YOSHIAKI |
分类号 |
H01L21/268 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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