发明名称 COLUMN DECODER CIRCUIT OF NONVOLATILE MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a column decoder circuit of nonvolatile memory device. <P>SOLUTION: A nonvolatile memory device disclosed here is connected between a 1st voltage and a control node, and includes; a 1st transistor controlled by a 2nd voltage; a 2nd transistor connected between the 1st voltage and the control node and controlled by a 3rd voltage; and a word line driver which drives a word line responding to the voltage of the control node. The 2nd voltage is set to the grounding voltage at the time of erasure operation and the 3rd voltage is set to the power source voltage at the time of erasure operation. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006107713(A) 申请公布日期 2006.04.20
申请号 JP20050278627 申请日期 2005.09.26
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 PARK JIN-SUNG;KIM MYONG-JAE;LEE SEUNG-KEUN
分类号 G11C16/06 主分类号 G11C16/06
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