| 摘要 |
PROBLEM TO BE SOLVED: To provide a defect inspection method capable of inspecting patterns of the uppermost layer and especially hole patterns at a high S/N ratio. SOLUTION: Diffracted light L2 is generated from a wafer 2 illuminated by illumination light L1 and guided and condensed by a light reception optical system 4, and an image of the wafer 2 by the diffracted light L2 is made to form on an imaging device 5 as an imaging means. An image processing device 6 detects defects by processing the image captured by the imaging device 5. A polarizing plate 7 is adjusted in such a way that the illumination light L1 may illuminate the wafer 2 with s-polarized light and that the line of intersection of its oscillating surface and the wafer 2 may be in parallel with a wiring pattern or intersect with it at right angles. A polarizing plate 8 is adjusted in such a way as to extract linearly polarized light of p-polarized light from among diffracted light from the wafer 2. It is thereby possible to inspect and hole patterns while distinguishing them from wiring patterns present below the hole patterns and inspect defects in surface layers at a satisfactory S/N ratio. COPYRIGHT: (C)2006,JPO&NCIPI
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