Non-thermal annealing of doped semiconductor material

摘要

A method of non-thermal annealing of a silicon wafer comprising irradiating a doped silicon wafer with electromagnetic radiation in a wavelength or frequency range coinciding with lattice phonon frequencies of the doped semiconductor material. The wafer is annealed in an apparatus including a cavity and a radiation source of a wavelength ranging from 10 - 25 mum and more particularly 15 - 18 mum, or a frequency ranging from 12 - 30 THz and more particularly 16.5 - 20 THz.