| 摘要 |
PROBLEM TO BE SOLVED: To effectively divide a wafer into individual devices, without lowering the quality of the device in dicing of the wafer. SOLUTION: In the rear surface W2 of a wafer W, a portion other than the rear side of a street S formed in the front surface W1 is coated with a resist film R, and a portion which is not covered with the resist film R is etched to divide to individual devices D from a rear surface to a front surface by fluorine system stable gas which is subjected to plasma processing. Since cutting is not carried out, cracks are not generated, and the quality is improved and, the method is effective for the streets to be separated at a sitting. COPYRIGHT: (C)2006,JPO&NCIPI |
