| 摘要 |
A semiconductor memory and a method for operating the latter in order are provided, at least in testwise fashion, to deactivate a word line segment ( 12 ) of a segmented word line not via a first line ( 21 ) otherwise used for deactivation, but rather via a second line ( 22 ) via that the word line segment ( 12 ) is otherwise activated. The second line ( 22 ) can optionally be biased with a second potential (Vpp) provided for activation or with a third potential (Vgnd). If the third potential (Vgnd) is used for at least temporarily deactivating the word line segment ( 12 ), the word line segment can be driven via a switching element ( 17 ), which couples the word line segment to the second line ( 22 ), without the complementary switching element ( 16 ) of the driver segment ( 20 ) having to be used for deactivation. It can thereby be ascertained which of two switching elements ( 16, 17 ) of the driver segment is defective and whether or not the semiconductor memory will function in a manner free of errors after permanent replacement of the word line on account of a floating potential of the tested word line segment ( 12 ).
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