| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory device containing a conductive side wall spacer compatible with improvement of deterioration in reliability for the case of utilizing a conventional nitride film side wall for a charge trap medium, and to provide a method for manufacturing it. SOLUTION: This nonvolatile memory device containing a conductive side wall spacer comprises a semiconductor substrate 21; a gate insulating film 22A on the semiconductor substrate; a gate 100 formed on the gate insulating film; a pair of side wall spacers 28A of insulating film formed on both side wall of the gate; a pair of conductive side wall spacers 29B formed on the pair of side wall spacers to capture and discharge charges; a pair of LDD regions 26 formed in the semiconductor substrate under both the side wall of the gate, a pair of the side wall spacers and the conductive side wall spacers; and a source/drain region 30 formed in the semiconductor substrate under an external region containing an external edge of a pair of the conductive side wall spacer on both sides of the gate. COPYRIGHT: (C)2006,JPO&NCIPI
|
