NITRIDE SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate which has preferable properties for the manufacturing of various nitride semiconductor devices by specifying or controlling local dispersion in an off-angle on the main surface of the nitride semiconductor substrate. SOLUTION: The crystallographic plane orientation of the main surface (1S) of a nitride semiconductor single crystal wafer (1) with a flat main surface locally varies within a prescribed angle range (Δθ). COPYRIGHT: (C)2006,JPO&NCIPI