| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a CMOS structure in which a gate leakage current and a threshold voltage are low. SOLUTION: An NMOSFET is provided with a gate insulating film which is composed of a silicon oxide film 10 and a hafnium silicate film 11, and a gate electrode having an n-type polysilicon film 15 formed on the gate insulating film. A PMOSFET is provided with a gate insulating film which is composed of a silicon oxide film 12, a hafnium silicate film 13, and an aluminum oxide film 14; and a gate electrode having a p-type polysilicon film 16 formed on the gate insulating film. It is preferable that the film thickness of the aluminum oxide film 14 is≤2 nm. COPYRIGHT: (C)2006,JPO&NCIPI
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