MGO-BASE COATING FOR ELECTRICALLY INSULATING SEMI-CONDUCTOR SUBSTRATES AND PRODUCTION METHOD

摘要

The invention relates to an inorganic magnesium oxide-based coating (MgO) for electrically insulating semi-conductor substrates such as a silicon carbide (SiC) and to a method for producing said insulating coating. The inventive method consists in preparing a treating solution of at least one type of water-soluble organomagnesium and/or of at least one type of a water-soluble magnesium salt for forming a homogenous polymer magnesium oxide/hydroxide layer by a hydrolysis-condensation reaction with water, in applying the treating water-soluble organomagnesium or water-soluble magnesium salt solution to a surface for forming a magnesium oxide-base layer and in densifying the thus formed layer at a temperature equal to or less than 1000 °C.