发明名称 |
Field effect transistor with electroplated metal gate |
摘要 |
Disclosed is a method for making a metal gate for a FET, wherein the metal gate comprises at least some material deposited by electroplating as well as an FET device comprising a metal gate that is at least partially plated. Further disclosed is a method for making a metal gate for a FET wherein the metal gate comprises at least some plated material and the method comprises the steps of: selecting a substrate having a top surface and a recessed region; conformally depositing a thin conductive seed layer on the substrate; and electroplating a filler gate metal on the seed layer to fill and overfill the recessed region.
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申请公布号 |
US2006081885(A1) |
申请公布日期 |
2006.04.20 |
申请号 |
US20050228269 |
申请日期 |
2005.10.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SAENGER KATHERINE L.;CABRAL CYRIL JR.;DELIGIANNI HARIKLIA;ANDRICACOS PANAYOTIS C.;ANDRICACOS CALIOPI;VEREECKEN PHILIPPE M.;COOPER EMANUEL I. |
分类号 |
H01L29/76;H01L21/28;H01L21/288;H01L21/336;H01L29/49;H01L29/745;H01L29/78 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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