| 摘要 |
<p>A semiconductor storage device capable of effectively reducing current consumption accompanying self-refresh operation in the stand-by mode. In the refresh operation in the stand-by mode, under control of a refresh control circuit (8B), firstly, current drive efficiency of sense amplifiers (70A to 70D) provided for amplifying a data signal appearing on a bit line is suppressed, secondly, the pulse width of the row enable signal RE defining the selection period of the word line WL is increased, and thirdly, a plurality of word lines are activated all at once in accordance with the row enable signal RE whose pulse width has been increased. This reduces the frequency of the operation of the circuit system related to the refresh operation, thereby reducing the current consumption.</p> |
