| 发明名称 |
Method of affecting RRAM characteristics by doping PCMO thin films |
| 摘要 |
A method of fabricating a doped-PCMO thin film layer includes preparing a PCMO precursor solution having a transition metal additive therein; and spin-coating the doped-PCMO spin-coating solution onto a wafer. |
| 申请公布号 |
US7029982(B1) |
申请公布日期 |
2006.04.18 |
| 申请号 |
US20040971387 |
申请日期 |
2004.10.21 |
| 申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
ZHUANG WEI-WEI;EVANS DAVID R.;ZHANG FENGYAN;HSU SHENG TENG |
| 分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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