发明名称 |
Method of fabricating a flash memory cell |
摘要 |
A method of forming a flash memory cell. A tunnel oxide layer, a floating gate layer, and a dielectric layer are formed on a substrate. A control gate layer is formed on the dielectric layer and then etched to form two control gates. The control gates are oxidized to form a plurality of second oxide layers on surfaces of the control gates and aside the control gates. The dielectric layer and the floating gate layer are etched by utilizing the second oxide layers as a mask to form a floating gate underneath each of the control gates. A source is formed between the floating gates. The floating gates and the substrate are oxidized to form a plurality of first oxide layers aside the floating gates and form a third oxide layer on a surface of the source.
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申请公布号 |
US7029973(B2) |
申请公布日期 |
2006.04.18 |
申请号 |
US20040904514 |
申请日期 |
2004.11.15 |
申请人 |
POWERCHIP SEMICONDUCTOR CORP. |
发明人 |
HUNG CHIH-WEI;HSU CHENG-YUAN;SUNG DA;DU CHIEN-CHIH |
分类号 |
H01L21/336;H01L21/8247;H01L27/115 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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