FILM DEPOSITION MATERIAL, FILM DEPOSITION METHOD AND ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a technology for easily depositing a tungsten film (a tungsten silicide film or a tungsten nitride film) having high purity at a low temperature by using a raw material containing halogen which might cause adverse effect on a semi-conductor element. SOLUTION: A film deposition material is used for depositing a tungsten film, a tungsten silicide film or a tungsten nitride film. The W source of the film is one or two or more of compounds to be selected from a group of hexa-dimethyl-amino-di-tungsten, hexa-ethyl-methyl-amino tungsten, and hexa-diethyl-amino-di-tungsten. COPYRIGHT: (C)2006,JPO&NCIPI