Method for forming a carbon nanotube and a plasma CVD apparatus for carrying out the method

摘要

In forming a carbon nanotube on the surface of a substrate surface by the plasma CVD method in accordance with the prior art, since the substrate is heated by plasma, it is difficult to suitably control the temperature of substrate and thus impossible to form the carbon nanotube at a low temperature. According to the present invention there is provided a method for forming a carbon nanotube comprising steps of introducing a carbon included feedstock gas into a vacuum chamber; generating plasma so that a substrate is not exposed to plasma during a vapor phase growth of the carbon nanotube on a substrate surface; heating the substrate to a predetermined temperature by using a heater; and promoting the growth of the carbon nanotube on the substrate surface with it being contacted by the feedstock gas decomposed by plasma.