发明名称 |
System, method and a program for correcting conditions for controlling a charged particle beam for lithography and observation, and a program and method for manufacturing a semiconductor device |
摘要 |
A system for correcting a charged particle beam lithography condition including: an error calculation unit configured to calculate an error in an illumination position of a charged particle beam, the charged particle beam is controlled by a lithography condition corrected by initial correction parameters; a temporary correction unit configured to calculate temporary correction parameters to decrease the error to a minimum; and a main correction unit configured to calculate main correction parameters correcting the lithography condition, by executing statistical processing using the temporary correction parameters and the initial correction parameters.
|
申请公布号 |
US2006076508(A1) |
申请公布日期 |
2006.04.13 |
申请号 |
US20050239428 |
申请日期 |
2005.09.30 |
申请人 |
NAKASUGI TETSURO;OTA TAKUMI |
发明人 |
NAKASUGI TETSURO;OTA TAKUMI |
分类号 |
G01N23/00 |
主分类号 |
G01N23/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|