HETERO-BIPOLAR TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a hetero-bipolar transistor that is reduced in base resistance without reducing the size of an alignment margin at the time of forming a contact hole. SOLUTION: The hetero-bipolar transistor is provided with: a collector region 27 provided adjacently to an insulating region 4 used for separating elements from each other; an epitaxial semiconductor region 50 containing an intrinsic base region 51 and a first extrinsic base region 52 adjoining an intrinsic region 521 and provided to overlap the collector region 27; and a second extrinsic base region 34 provided on the insulating region 4 adjacently to the first extrinsic base region 52 so that the region 34 may be electrically connected to the region 52. The transistor is also provided with: an emitter conductive layer 33 having a top surface and a bottom surface smaller than the top surface and provided so that the bottom surface comes into contact with the intrinsic base region 51; and an emitter region 53 provided in the intrinsic base region 51 so that the region 53 comes into contact with the emitter conductive layer 33. COPYRIGHT: (C)2006,JPO&NCIPI