| 摘要 |
PROBLEM TO BE SOLVED: To secure the life of constant voltage TDDB of a gate insulation film of an in-process charge-up protection element which uses a MOS diode element etc. SOLUTION: On an n-type semiconductor substrate 1, a first p-type well 3 and a second p-type well 4 electrically separated by an n-type well 2, and an element isolation film 5 are formed. On the first p-type well 3, a MOS transistor consisting of a first gate insulation film 6 and a gate electrode 8 is formed while on the second p-type well 4, the MOS diode element consisting of a second gate insulation film 7 and the gate electrode 8 is formed. This semiconductor device includes a circuit for setting a first voltage to be applied to the second p-type well 4 somewhere between a second voltage to be applied to the first gate electrode 8 and a third voltage to be applied to the first p-type well 3. COPYRIGHT: (C)2006,JPO&NCIPI
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