| 摘要 |
PROBLEM TO BE SOLVED: To reduce wiring resistance, wiring capacity, and a chip area. SOLUTION: An SOI substrate 30 is composed by forming an n<SP>-</SP>type silicon layer 33 on a silicon oxide film 32 after forming the silicon oxide film 32 on a silicon substrate 31. A drain region 35 is formed so as to reach the silicon oxide film 32 from the surface of the silicon layer 33. A drain electrode 42 is formed by being electrically in contact with the rear face of the SOI substrate 30. A conductor plug 41 is extended in the silicon substrate 31 by penetrating the drain region 35 and the silicon oxide film 32 from the surface of the drain region 35, and formed by being electrically in contact with the drain region 35 and the silicon substrate 31. COPYRIGHT: (C)2006,JPO&NCIPI
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