发明名称 Plasma chemical vapor deposition methods
摘要 A plasma chemical vapor deposition (CVD) method is for depositing a metal layer. In the plasma CVD method, a metal source gas is pre-injected into a chamber containing a substrate, and thereafter a plasma is formed in the chamber to deposit the metal layer on the substrate.
申请公布号 US2006078690(A1) 申请公布日期 2006.04.13
申请号 US20050045061 申请日期 2005.01.31
申请人 LEE SUNSOO;LEE HAEMOON;JEE YEONHONG 发明人 LEE SUNSOO;LEE HAEMOON;JEE YEONHONG
分类号 H05H1/24 主分类号 H05H1/24
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