发明名称 |
Plasma chemical vapor deposition methods |
摘要 |
A plasma chemical vapor deposition (CVD) method is for depositing a metal layer. In the plasma CVD method, a metal source gas is pre-injected into a chamber containing a substrate, and thereafter a plasma is formed in the chamber to deposit the metal layer on the substrate.
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申请公布号 |
US2006078690(A1) |
申请公布日期 |
2006.04.13 |
申请号 |
US20050045061 |
申请日期 |
2005.01.31 |
申请人 |
LEE SUNSOO;LEE HAEMOON;JEE YEONHONG |
发明人 |
LEE SUNSOO;LEE HAEMOON;JEE YEONHONG |
分类号 |
H05H1/24 |
主分类号 |
H05H1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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