| 摘要 |
An object of the present invention is to prevent a junction leakage current generation across a pn junction formed under a silicide layer, even when a direct probing to an electrode formed of the silicide layer is performed. There is provided a semiconductor device including an element for evaluation, wherein the element for evaluation includes a device isolation region, a first diffusion layer region formed adjacent to the device isolation region, an electrode for probe formed to be electrically connected to the first diffusion layer region, a semiconductor region which is formed so as to contact to the first diffusion layer region, and has a conductivity type different from that of the first diffusion layer region, and an evaluation pattern which is formed to be electrically connected to the electrode for probe, and includes at least a part of the first diffusion layer region, and wherein a second diffusion layer region which has the same conductivity type as that of the first diffusion layer region is selectively formed under the first diffusion layer region formed under the electrode for probe to be contacted to the first diffusion layer region and the semiconductor region.
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