发明名称 |
Method for filling a hole with a metal |
摘要 |
In a method for filling a hole with a metal, an insulating layer, a first mask layer and a second mask layer are successively formed on a semiconductor substrate. The first and second mask layers are etched using a photoresist pattern to form first and second masks. The first mask layer pattern is selectively etched using an etchant, the first mask layer pattern having a higher etching selectivity than the second layer pattern with respect to the etchant, to form a third mask layer pattern having a broadened opening. The insulating layer is etched using the second mask to form a hole in the insulating layer. A metal layer is formed in the hole and the third opening. The metal layer is planarized to form a metal plug buried in the hole without recesses or voids.
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申请公布号 |
US7026242(B2) |
申请公布日期 |
2006.04.11 |
申请号 |
US20040802411 |
申请日期 |
2004.03.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SON HONG-SEONG;HAH SANG-ROK;KIM IL-GOO;OH JUN-HWAN |
分类号 |
H01L21/4763;H01L21/288;H01L21/768 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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