| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming tunnel magnetoresistive element by which the interface of each layer is prevented from being affected by the atmosphere at the time of forming a series of layers constituting a tunnel magnetoresistive layer. SOLUTION: In the method of forming tunnel magnetoresistive element, a tunnel magnetoresistive element is formed with the tunnel magnetoresistive layer 3 having a structure in which a tunnel barrier layer 5 is pinched between a first magnetic layer 4 and a second magnetic layer 6. The method include a step of forming first wiring 2 on a substrate 1 and a step of successively forming the first magnetic layer 4, tunnel barrier layer 5, and second magnetic layer 6 in a vacuum by using the same mask 7, so that the first magnetic layer 4 may be connected to the first wiring 2. The method also includes a step of forming an insulating layer 8 covering at least the partial side face of the tunnel magnetoresistive layer 3, and a step of forming second wiring 10 connected to the surface of the second magnetic layer 6. COPYRIGHT: (C)2006,JPO&NCIPI
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