| 摘要 |
PROBLEM TO BE SOLVED: To suppress the generation of voids in a gallium phosphide single crystal and at the same time, to suppress the generation of a twin crystal in the gallium phosphide single crystal in a method for manufacturing the gallium phosphide single crystal having a diameter of≥63.5 mm by a liquid encapsulated Czochralski (LEC) method. SOLUTION: When the diameter of a crystal to be grown is defined as d and the inner diameter of a crucible is defined as D, d/D is set to be≤0.7. Further, the rotation speed of the crystal is set to be 2-5 rpm, and the crystal and the crucible are rotated in the same direction. Thereby, in the obtained GaP single crystal, the generation of voids can be also suppressed, and at the same time, the generation of the twin crystal can be suppressed. Accordingly, the manufacturing yield of a light-emitting diode can be improved by using the GaP single crystal manufactured by the method of this invention. COPYRIGHT: (C)2006,JPO&NCIPI
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