TRANSFER MASK BLANK, TRANSFER MASK, AND TRANSFER METHOD USING THE TRANSFER MASK

摘要

A transfer mask for transfer by a charged particle beam such as an electron beam, an X-ray transfer mask, and an extreme ultraviolet transfer mask are efficiently fabricated with an improved fabrication accuracy of the mask pattern by using an existing system such as a photomask electron beam lithography system. The substrate (2) of the transfer mask (1) is generally rectangular. An opening (3) is made in the generally central portion of the bottom surface of the substrate (2). A self-supporting thin membrane (m) constituting a pattern area (4) is supported at the generally central portion of the top of the substrate (2) corresponding to the opening (3). A through hole (h) of a mask pattern or an absorber or scatter of the mask pattern is provided to the self-supporting thin membrane (m). The pattern area (4) is flush with its peripheral area (5).