INTEGRATED CIRCUIT MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To disclose an integrated circuit memory device having a first column memory cell electrically connected to a pair of first bit lines and a bit line precharge/selection circuit.

SOLUTION: The bit line precharge/selection circuit has at least one stacked structure made of thin-film transistors. The thin-film transistors include first PMOS pull-up thin-film transistors and first NMOS pass thin-film transistors. Further, the thin-film transistors are electrically coupled to one of the pair of first bit lines. The first column memory cell includes a thin-film transistor SRAM cell.

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