Mask having Patterns for Reducing Flare Noise in Semiconductor and Method for Reducing Flare Noise using thereof,申请号KR20030101849-传众专利搜索

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发明名称	Mask having Patterns for Reducing Flare Noise in Semiconductor and Method for Reducing Flare Noise using thereof
摘要
申请公布号	KR100567743(B1)	申请公布日期	2006.04.05
申请号	KR20030101849	申请日期	2003.12.31
申请人		发明人
分类号	H01L21/027	主分类号	H01L21/027
代理机构		代理人
主权项
地址

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