发明名称 |
Undoped oxide liner/BPSG for improved data retention |
摘要 |
Semiconductor devices with improved data retention are formed by depositing an undoped oxide liner on spaced apart transistors followed by in situ deposition of a BPSG layer. Embodiments include depositing an undoped silicon oxide liner derived from TEOS, as at a thickness of 400 Å to 600 Å, on transistors of a non-volatile semiconductor device, as by sub-atmospheric chemical vapor deposition, followed by depositing the BPSG layer in the same deposition chamber.
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申请公布号 |
US7023046(B2) |
申请公布日期 |
2006.04.04 |
申请号 |
US20030617450 |
申请日期 |
2003.07.11 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NGO MINH VAN;HUI ANGELA;CHENG NING;PARK JEYONG;YANG JEAN YEE-MEI;HUERTAS ROBERT A.;KAMAL TAZRIEN;GAO PEI-YUAN;GOTTIPATI TYAGAMOHAN |
分类号 |
H01L29/788;H01L21/316;H01L21/8247;H01L27/115;H01L29/51 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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