| 摘要 |
A method for producing chips from a wafer of low thickness, in which the wafer has an active side on which integrated circuits are arranged in a grid with interspaces and a metallized backside facing away from the active side, the method preferably includes the steps of: coating the active side of the wafer with a protective coating; covering the active side with a mask having light-transmitting lines disposed along the interspaces between the integrated circuits, the mask being otherwise non-light transmitting, exposing the light-transmitting lines to light for producing exposed lines; etching away the exposed lines; producing trenches having depth from the exposed lines; removing the protective coating on the active side of the wafer, applying a carrier on the active side of the wafer; grinding the metallized backside of the wafer; removing the metallized backside by way of etching to a wafer thickness of about 20 microns greater than the depth of the trenches; removing the metallized backside to a base of the trenches; and, releasing the chips from the carrier.
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