发明名称 |
Si/C superlattice useful for semiconductor devices |
摘要 |
A Si/C superlattice useful for semiconductor devices comprises a plurality of epitaxially grown silicon layers alternating with carbon layers respectively adsorbed on surfaces of said silicon layers. Structures and devices comprising the superlattice and methods are described.
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申请公布号 |
US7023010(B2) |
申请公布日期 |
2006.04.04 |
申请号 |
US20040823990 |
申请日期 |
2004.04.14 |
申请人 |
NANODYNAMICS, INC. |
发明人 |
WANG CHIA GEE;TSU RAPHAEL |
分类号 |
H01L29/06;H01L29/768;H01L33/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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