| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide improved complementary phase shift mask (c:PSM) imaging techniques including a method in which scattering bars are provided on the trim mask in order to allow better CD (critical dimensions) uniformity to be achieved in the double exposure process. <P>SOLUTION: The number, size and position of the scattering bars can be optimized, to achieve a desired isofocal CD and/or the desired level of sensitivity of the CD to trim exposure energy used in the second exposure step of the c:PSM process. The trim exposure dose can be regulated, and/or the trim width used on the trim mask can be optimized, to compensate for iso-dense bias so as to achieve optical proximity effect correction. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
