| 摘要 |
The invention is directed to improvement of reliability of a chip size package type semiconductor device in a manufacturing method thereof. A support body is formed on a front surface of a semiconductor substrate with a first insulation film therebetween. Then, a part of the semiconductor substrate is selectively etched from its back surface to form an opening, and then a second insulation film is formed on the back surface. Next, the first insulation film and the second insulation film at a bottom of the opening are selectively etched, to expose pad electrodes at the bottom of the opening. Then, a third resist layer is selectively formed on a second insulation film at boundaries between sidewalls and the bottom of the opening on the back surface of the semiconductor substrate. Furthermore, a wiring layer electrically connected with the pad electrodes at the bottom of the opening and extending onto the back surface of the semiconductor substrate is selectively formed corresponding to a predetermined pattern.
|
