发明名称 |
SINGLE CRYSTAL WIRE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
<p>Disclosed are a single crystal wire and a manufacturing method thereof. The method comprises the steps of: placing into a growth crucible at least one metal selected from the group consisting of gold, copper, silver, aluminum and nickel; heating and melting the metal placed in the growth crucible; growing a single crystal using the metal crystal as a seed by the Czochralski or Bridgman method; cutting the grown single crystal by electric discharge machining; and forming the cut single crystal into a wire. In the method, the grown metal single crystal is formed into a disc-shaped piece by electric discharge machining. The piece is formed into a single crystal wire by wire-cut electric discharge machining, and the single crystal wire can be used as a ring, a pendant or a wire within a high-quality cable making a connection in audio and video systems. Also, the single crystal formed into the disc-shaped piece by electric discharge machining can be used as a substrate and a target for deposition.</p> |
申请公布号 |
WO2006033534(A1) |
申请公布日期 |
2006.03.30 |
申请号 |
WO2005KR03050 |
申请日期 |
2005.09.15 |
申请人 |
ERATION FOUNDATION PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOP;JEONG, SE YOUNG;CHO, CHAE RYONG;PARK, SANG EON;KIM, SUNG KYU |
发明人 |
JEONG, SE YOUNG;CHO, CHAE RYONG;PARK, SANG EON;KIM, SUNG KYU |
分类号 |
C22B11/02;C30B11/00;C30B11/14;C30B15/00;C30B15/02;C30B15/36;C30B29/02;C30B29/62;(IPC1-7):C30B15/00 |
主分类号 |
C22B11/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|