| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method which can eliminate a problem caused from an anti-reflecting film while keeping wide to some extent a DOF margin in exposing a resist film. SOLUTION: The resist film 5' is directly formed on a silicon oxide film 3 formed on a silicon substrate 1, and the resist film 5' is directly exposed and is developed to form a resist pattern 5. The resist pattern 5 is then plasma-treated with a mixed gas composed of Ar, O<SB>2</SB>, C<SB>4</SB>F<SB>6</SB>to be shaped. The silicon oxide film 3 is etched with the shaped resist pattern 5 as a mask to form a contact hole 13. COPYRIGHT: (C)2006,JPO&NCIPI
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