| 摘要 |
A method of carrying out optical proximity correction in the design of a reticle for exposing a photoresist of a wafer in photolithography using a lens having a focal plane, the method includes generating a dense-isolated offset focus/exposure matrix, containing dense-isolated offset values, being the difference between values of linewidth for dense and isolated lines, as a function of focal plane position, for each of a plurality of different exposures; selecting from among the contours of the dense-isolated offset focus/exposure matrix for each different exposure, the flattest contour, and carrying out optical proximity correction on the basis that the exposure will be the exposure corresponding to said flattest contour. <IMAGE> |
