| 发明名称 |
Disposable hard mask for memory bitline scaling |
| 摘要 |
The invention is a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes buried bitlines in a semiconductor substrate. Additionally, doped regions are formed adjacent the buried bitlines. The doped regions adjacent the buried bitlines inhibit a leakage current between the buried bitlines.
|
| 申请公布号 |
US7018868(B1) |
申请公布日期 |
2006.03.28 |
| 申请号 |
US20040770245 |
申请日期 |
2004.02.02 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YANG JEAN Y.;ERHARDT JEFF P.;TABERY CYRUS;QIAN WEIDONG;RAMSBEY MARK T.;PARK JAEYONG;KAMAL TAZRIEN |
| 分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
