| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that, in a semiconductor device containing a resistive element, a projecting portion for forming a narrow gap is formed to improve the surge current capacity to protect the semiconductor device from surge destruction as a countermeasure against application of high voltage such as static electricity from outside, however, this structure increases the dominant area of the resistive element and eventually increases the size of the semiconductor device. SOLUTION: Between edges at the corners of a resistive element pattern having a zigzag curves structure, a portion to form a Zener diode is formed. Due to this structure, surge current capacity for such an occasion that high voltage such as static electricity is applied can be improved without increasing the dominant area of the semiconductor device. COPYRIGHT: (C)2006,JPO&NCIPI
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