发明名称 |
High output group III nitride light emitting diodes |
摘要 |
A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least 29 milliwatts at its dominant wavelength between 390 and 540 nanometers.
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申请公布号 |
US2006060872(A1) |
申请公布日期 |
2006.03.23 |
申请号 |
US20050112429 |
申请日期 |
2005.04.22 |
申请人 |
EDMOND JOHN A;BERGMANN MICHAEL J;EMERSON DAVID T;HABERERN KEVIN W |
发明人 |
EDMOND JOHN A.;BERGMANN MICHAEL J.;EMERSON DAVID T.;HABERERN KEVIN W. |
分类号 |
H01L33/00;H01L33/32 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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