APPARATUS FOR THE OPTIMIZATION OF ATMOSPHERIC PLASMA IN A PLASMA PROCESSING SYSTEM

摘要

An apparatus for cleaning a substrate in a reactive ion etch process is disclosed. The apparatus is configured to produce an atmospheric plasma using a RF generation device. The apparatus includes a plasma forming chamber including a cavity defined by a set of interior chamber walls comprised of a dielectric material. The apparatus also includes an atmospheric plasma generated by the RF generation device, the atmospheric plasma protruding from a first end of the cavity to clean the substrate.