| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To protect transistors in an internal circuit by preventing ESD surge generated on the cut surface of a fuse for redundancy in a semiconductor device. <P>SOLUTION: The semiconductor device comprises a semiconductor substrate 1, a field insulating film 2 formed on the surface of the semiconductor substrate 1, a fuse 4A formed on the field insulating film 2, a capacitor 3 electrically connected to the fuse 4A, and transistors TR1, TR2 electrically connected to the capacitor 3. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
