| 摘要 |
PROBLEM TO BE SOLVED: To improve surface evenness on a large square pattern region, for optically detecting a position, such as a target. SOLUTION: A large square dummy pattern DL is formed at a lower layer of a target T2 region formed at a scribe region SR of a wafer. A small square dummy patterns in a lower layer and a small square dummy pattern Ds2 in the higher layer are disposed over a wide region of a space between patterns serving as elements in a product region PR and a scribe region SR (active region L1, L2, L3, gate electrode 17 and the like). At that time, the small square dummy pattern Ds2 in the higher layer is shifted a half pitch with respect to the small square dummy pattern in the lower layer. COPYRIGHT: (C)2006,JPO&NCIPI
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