| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the number of columnar electrodes in a semiconductor device called a CSP provided with the columnar electrodes. <P>SOLUTION: The plurality of columnar electrodes 4 are respectively arranged on four virtual circulating lines in a flat rectangular frame shape in different sizes on a silicon substrate 4. In this case, the interval of the columnar electrodes 12 arranged on the second virtual circulating line from the inner side is such an interval that one of upper layer wiring 18 pulled out from the columnar electrodes 12 arranged on the first virtual circulating line from the inner side can be put around. The interval of the columnar electrodes 12 arranged on the third virtual circulating line from the inner side is such an interval that two of the upper layer wiring 18 pulled out from the columnar electrodes 12 arranged on the first and second virtual circulating lines from the inner side can be put around. The interval of the columnar electrodes 12 arranged on the fourth virtual circulating line from the inner side is such an interval that three of the upper layer wiring 18 pulled out from the columnar electrodes 12 arranged on the first, second and third virtual circulating lines from the inner side can be put around. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
