发明名称 SOLID-STATE IMAGING ELEMENT AND ITS MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a solid-state imaging element capable of excellently diffusing and supplying hydrogen into the semiconductor substrate irrespective of the constitution of the semiconductor substrate on the surface side of the same. SOLUTION: The solid-state imaging element 31 is constituted in such a way that a light reception sensor 6 is formed in the semiconductor substrate 4, and a hole 24 is formed on the opposite side to a side where the light reception sensor 6 is formed, and further a hydrogen containing film 25 is formed over the entire surface including the inside of the hole 24. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006073680(A) 申请公布日期 2006.03.16
申请号 JP20040253586 申请日期 2004.08.31
申请人 SONY CORP 发明人 KITAZAWA YOSHIYUKI
分类号 H01L27/148;H04N5/335;H04N5/361;H04N5/369;H04N5/372;H04N5/374 主分类号 H01L27/148
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