| 摘要 |
A method for manufacturing a semiconductor physical quantity sensor including a support substrate, a movable electrode, a fixed electrode is provided. The method includes the steps of: preparing a multi-layered substrate; forming a compression stress layer on a part of a surface of the semiconductor layer; forming a trench in the semiconductor layer; and releasing the movable electrode from the substrate by removing the insulation film. In the step of releasing, the part of the semiconductor layer, on which the compression stress layer is disposed, is cambered by the compression stress toward a direction apart from the substrate.
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