METHOD FOR PRODUCING SILICON WAFER

摘要

Disclosed is a method for producing a silicon wafer comprising, in this order, a planarization step for grinding or lapping the front and back sides of a wafer, a single-wafer acid etching step wherein an acid etching liquid is supplied to the surface of the wafer while spinning the wafer and the entire surface of the wafer is etched so as to control the surface roughness (Ra) thereof to 0.20 µm or less, and a double-side polishing step for simultaneously polishing the front and back sides of the wafer having been etched by the acid. A single-side polishing step, wherein either front or back side of the wafer having been etched by the acid is polished at a time, may be included instead of the double-side polishing step.