| 摘要 |
A light-emitting device of gallium nitride-based III-V group compound semiconductor includes a substrate, a texturing surface area arranged over the substrate; a n-type gallium nitride-based III-V group compound semiconductor layer having an ohmic contact area with texturing surface disposed over the substrate; a light-emitting layer arranged over the n-type gallium nitride-based III-V group compound semiconductor layer; a p-type gallium nitride-based III-V group compound semiconductor layer disposed over the light-emitting layer; a texturing surface layer covered over the p-type gallium nitride-based III-V group compound semiconductor layer; a transparent conductive oxide layer arranged over the texturing surface layer and establishing an ohmic contact with the texturing surface layer; a first electrode electrically coupling with the ohmic contact area with texturing surface of the n-type gallium nitride-based III-V group compound semiconductor layer; a second electrode electrically coupling with the transparent conductive oxide layer.
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