发明名称 METHOD OF THINNING SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method of thinning a semiconductor wafer which can reduce a processing cost by reusing a carrier plate in thinning the semiconductor wafer by spin etching. SOLUTION: In the method of thinning the semiconductor wafer 10 containing a first face 10a having a semiconductor element region and a second face 10b formed on the opposite side, the first face 10a of the semiconductor wafer 10 is pasted together with a first face 20a of a support substrate 20 for supporting the semiconductor wafer 10 via an adhesive layer 30. Then, the second face 10b of the semiconductor wafer 10 is ground. Next, at least in the periphery of a second face 20b opposite from the first face 20a of the support substrate 20, a protection film 50 is formed that continuously covers the periphery. Then, after setting the support substrate 20 on a stage 60, the stage 60 is turned while applying an etchant 55 onto the ground second face 10b of the semiconductor wafer 10 to spin-etch the semiconductor wafer 10. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006073577(A) 申请公布日期 2006.03.16
申请号 JP20040251808 申请日期 2004.08.31
申请人 SEIKO EPSON CORP 发明人 YAMAGUCHI KOJI;MATSUO TAKEHIDE
分类号 H01L21/306;H01L21/304;H01L21/683 主分类号 H01L21/306
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