| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor which is reduced in cost, improved in carrier mobility, has an improved ON/OFF ratio of a current, and is kept high in reliability; and to provide its manufacturing method. SOLUTION: The thin film transistor is equipped with an insulating board 3 which is uniform in thickness and provided with a first and a second flat main surfaces, a gate electrode 4 formed on the first main surface of the insulating board 3, a channel layer 2 formed on the second main surface of the insulating board 3 and composed of an organic semiconductor, carbon nanotubes or an organic dispersing material containing, at least, carbon nanotubes, and a source electrode 1 and a drain electrode 5 which are formed on the channel layer 2 interposing the gate electrode 4 between them. COPYRIGHT: (C)2006,JPO&NCIPI
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