| 摘要 |
PURPOSE:To obtain a semiconductor device having less power consumption operating at a high speed by varying a source potential with respect to a semiconductor substrate synchronously with a gate potential by means of potential control means. CONSTITUTION:The voltages of a semiconductor substrate 21 and the regions of a source 25, a drain 26 and a gate 28 are independently controlled to be composed. Here, potential control means for varying the potential of the source 25 with respect to the substrate 21 synchronously with the potential of the gate 28 is provided. When the transistor is in operation, the potential of the source 25 is so varied with respect to the substrate 21 that a threshold voltage is made low when a transistor is operated, the voltage is made high when the transistor is interrupted to reduce a leakage current. Thus, a semiconductor element having less power consumption at a high speed operation can be obtained. |
